JPH0442833B2 - - Google Patents

Info

Publication number
JPH0442833B2
JPH0442833B2 JP54148700A JP14870079A JPH0442833B2 JP H0442833 B2 JPH0442833 B2 JP H0442833B2 JP 54148700 A JP54148700 A JP 54148700A JP 14870079 A JP14870079 A JP 14870079A JP H0442833 B2 JPH0442833 B2 JP H0442833B2
Authority
JP
Japan
Prior art keywords
ion implantation
melting point
molybdenum
high melting
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54148700A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5671973A (en
Inventor
Keizo Kobayashi
Osamu Kudo
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14870079A priority Critical patent/JPS5671973A/ja
Publication of JPS5671973A publication Critical patent/JPS5671973A/ja
Publication of JPH0442833B2 publication Critical patent/JPH0442833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP14870079A 1979-11-16 1979-11-16 Preparation method of semiconductor system Granted JPS5671973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14870079A JPS5671973A (en) 1979-11-16 1979-11-16 Preparation method of semiconductor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14870079A JPS5671973A (en) 1979-11-16 1979-11-16 Preparation method of semiconductor system

Publications (2)

Publication Number Publication Date
JPS5671973A JPS5671973A (en) 1981-06-15
JPH0442833B2 true JPH0442833B2 (en]) 1992-07-14

Family

ID=15458635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14870079A Granted JPS5671973A (en) 1979-11-16 1979-11-16 Preparation method of semiconductor system

Country Status (1)

Country Link
JP (1) JPS5671973A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628588A (en) * 1984-06-25 1986-12-16 Texas Instruments Incorporated Molybdenum-metal mask for definition and etch of oxide-encapsulated metal gate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104879A (en) * 1976-03-01 1977-09-02 Hitachi Ltd Manufacture of semiconductor device
JPS53139985A (en) * 1977-05-13 1978-12-06 Nippon Telegr & Teleph Corp <Ntt> Production of mis type transistors
JPS5481082A (en) * 1977-12-12 1979-06-28 Fujitsu Ltd Manufacture of semiconductor

Also Published As

Publication number Publication date
JPS5671973A (en) 1981-06-15

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